vs-80apf1.pbf series, vs-80apf1.-m3 series www.vishay.com vishay semiconductors revision: 06-feb-14 1 document number: 93725 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fast soft recovery r ectifier diode, 80 a features ? 150 c max. operating junction temperature ? low forward voltage drop and short reverse recovery time ? designed and qualified according to jedec ? -jesd47 ? material categorization: ? for definitions of co mpliance please see www.vishay.com/doc?99912 applications these devices are intended for use in output rectification and freewheeling in inverters, choppers and converters as well as in input rectification where severe restrictions on conducted emi should be met. description the vs-80apf1... soft recovery rectifier seri es has been optimized for combined short reverse recovery time and low forward voltage drop. the glass passivation ensures st able reliable operation in the most severe te mperature and power cycling conditions. product summary package to-247ac i f(av) 80 a v r 1000 v, 1200 v v f at i f 1.35 v i fsm 1250 a t rr 90 ns t j max. 150 c diode variation single die snap factor 0.5 base cathode + 2 13 a node -- anode to-247ac 1 2 3 available major ratings and characteristics symbol test conditions values units v rrm 1000/1200 v i f(av) sinusoidal waveform 80 a i fsm 1250 t rr 1 a, - 100 a/s 90 ns v f 40 a, t j = 25 c 1.2 v t j -40 to 150 c voltage ratings part number v rrm , maximum peak reverse voltage v v rsm , maximum non-repetitive peak reverse voltage v i rrm at 150 c ma vs-80apf10pbf, VS-80APF10-M3 1000 1100 15 vs-80apf12pbf, vs-80apf12-m3 1200 1300
vs-80apf1.pbf series, vs-80apf1.-m3 series www.vishay.com vishay semiconductors revision: 06-feb-14 2 document number: 93725 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 absolute maximum ratings parameter symbol test conditions values units maximum average forward current i f(av) t c = 92 c, 180 conduction half sine wave 80 a maximum peak one cycle ? non-repetitive surge current i fsm 10 ms sine pulse, rated v rrm applied 1100 10 ms sine pulse, no voltage reapplied 1250 maximum i 2 t for fusing i 2 t 10 ms sine pulse, rated v rrm applied 5000 a 2 s 10 ms sine pulse, no voltage reapplied 7000 maximum i 2 ? t for fusing i 2 ? t t = 0.1 ms to 10 ms, no voltage reapplied 70 000 a 2 ? s electrical specifications parameter symbol test conditions values units maximum forward voltage drop v fm 80 a, t j = 25 c 1.35 v forward slope resistance r t t j = 150 c 4.03 m ? threshold voltage v f(to) 0.87 v maximum reverse leakage current i rm t j = 25 c v r = rated v rrm 0.1 ma t j = 150 c 15 recovery characteristics parameter symbol test conditions values units reverse recovery time t rr i f at 80 a pk ? 25 a/s ? 25 c 480 ns reverse recovery current i rr 7.1 a reverse recovery charge q rr 2.1 c snap factor s 0.5 thermal - mechanical specifications parameter symbol test conditions values units maximum junction and storage ? temperature range t j , t stg -40 to 150 c maximum thermal resistance, ? junction to case r thjc dc operation 0.35 c/w maximum thermal resistance, ? junction to ambient r thja 40 typical thermal resistance, ? case to heatsink r thcs mounting surface, smooth and greased 0.2 approximate weight 6g 0.21 oz. mounting torque minimum 6 (5) kgf cm (lbf in) maximum 12 (10) marking device case style to-247ac 80apf10 80apf12 i fm t rr dir dt i rm(rec) q rr t
vs-80apf1.pbf series, vs-80apf1.-m3 series www.vishay.com vishay semiconductors revision: 06-feb-14 3 document number: 93725 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 1 - current rating characteristics fig. 2 - current rating characteristics fig. 3 - forward power loss characteristics fig. 4 - forward power loss characteristics fig. 5 - maximum non-re petitive surge current fig. 6 - maximum non-re petitive surge current 0 30 maximum allowable case temperature (c) average forward current (a) 20 10 40 50 60 70 80 90 90 80 100 110 120 130 140 150 r thjc (dc) = 0.35 c/w conduction angle 60 30 90 180 120 ? 0 maximum allowable case temperature (c) average forward current (a) 20 40 60 80 100 120 140 90 80 100 110 120 130 140 150 dc 30 60 90 120 180 r thjc (dc) = 0.35 c/w ? conduction period maximum average forward power loss (w) average forward current (a) 0 20 40 60 80 100 120 140 0 25 50 75 100 125 150 175 200 rms limit dc 180 120 90 60 30 ? conduction period t j = 150 c maximum average forward power loss (w) average forward current (a) 0 20 30 50 70 90 10 40 60 80 0 20 40 60 80 100 120 140 180 120 90 60 30 rms limit 80epf.. series t j = 150 c conduction angle ? 1 10 100 peak half sine wave forward current (a) number of equal amplitude half cycle current pulses (n) 300 400 500 600 700 800 900 1000 1100 1200 initial t j = 150 c at 60 hz 0.0083 s at 50 hz 0.0100 s at any rated load condition and with rated v rrm applied following surge. 0.01 0.1 1 peak half sine wave forward current (a) pulse train duration (s) 300 400 500 600 700 800 900 1000 1100 1200 1300 initial t j = 150 c no voltage reapplied rated v rrm reapplied maximum non-repetitive surge current versus pulse train duration.
vs-80apf1.pbf series, vs-80apf1.-m3 series www.vishay.com vishay semiconductors revision: 06-feb-14 4 document number: 93725 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 7 - forward voltage drop characteristics fig. 8 - recovery time characteristics, t j = 25 c fig. 9 - recovery time characteristics, t j = 150 c fig. 10 - recovery charge characteristics, t j = 25 c fig. 11 - recovery charge characteristics, t j = 150 c 1000 10 100 1 0.5 0 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 instantaneous forward current (a) instantaneous forward voltage (v) t j = 25 c t j = 150 c 0 40 80 120 160 200 t rr - typical reverse recovery time (ns) di/dt - rate of fall of forward current (a/s) 0 100 200 300 400 500 600 700 800 t j = 25 c i fm = 80 a i fm = 20 a i fm = 10 a i fm = 1 a i fm = 40 a 0 40 80 120 160 200 t rr - typical reverse recovery time (ns) di/dt - rate of fall of forward current (a/s) 0 200 400 600 800 1000 1200 1400 1600 1800 t j = 150 c i fm = 80 a i fm = 40 a i fm = 20 a i fm = 10 a i fm = 1 a 0 40 80 120 160 200 q rr - typical reverse recovery charge (nc) di/dt - rate of fall of forward current (a/s) 0 2000 4000 6000 8000 10 000 12 000 t j = 25 c i fm = 80 a i fm = 1 a i fm = 40 a i fm = 20 a i fm = 10 a 0 40 80 120 160 200 q rr - typical reverse recovery charge (nc) di/dt - rate of fall of forward current (a/s) 0 5000 10 000 15 000 20 000 25 000 t j = 150 c i fm = 80 a i fm = 1 a i fm = 40 a i fm = 10 a i fm = 20 a
vs-80apf1.pbf series, vs-80apf1.-m3 series www.vishay.com vishay semiconductors revision: 06-feb-14 5 document number: 93725 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 12 - recovery current characteristics, t j = 25 c fig. 13 - recovery current characteristics, t j = 150 c fig. 14 - thermal impedance z thjc characteristics 0 40 80 120 160 200 i rr - typical reverse recovery current (a) di/dt - rate of fall of forward current (a/s) 0 5 10 15 20 25 30 35 40 45 t j = 25 c i fm = 80 a i fm = 1 a i fm = 40 a i fm = 20 a i fm = 10 a 0 40 80 120 160 200 i rr - typical reverse recovery current (a) di/dt - rate of fall of forward current (a/s) 0 10 20 30 40 50 60 t j = 150 c i fm = 80 a i fm = 1 a i fm = 40 a i fm = 20 a i fm = 10 a 10 0.0001 0.001 0.01 0.1 1 square wave pulse duration (s) z thjc - transient thermal impedance (c/w) 0.001 0.01 0.1 1 d = 0.50 d = 0.33 d = 0.25 d = 0.17 d = 0.08 steady state value (dc operation) 80epf.. series single pulse
vs-80apf1.pbf series, vs-80apf1.-m3 series www.vishay.com vishay semiconductors revision: 06-feb-14 6 document number: 93725 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 ordering information table ordering information (example) preferred p/n quantity per t/r minimum order quantity packaging description vs-80apf10pbf 25 500 antistatic plastic tubes VS-80APF10-M3 25 500 antistatic plastic tubes vs-80apf12pbf 25 500 antistatic plastic tubes vs-80apf12-m3 25 500 antistatic plastic tubes links to related documents dimensions www.vishay.com/doc?95542 part marking information to-247ac pbf www.vishay.com/doc?95226 to-247ac -m3 www.vishay.com/doc?95007 10 = 1000 v 12 = 1200 v 2 - current rating (80 = 80 a) 1 - vishay semiconductors product 3 - circuit configuration: a = single diode, 3 pins 4 - package: p = to-247ac 5 - type of silicon: f = fast recovery 6 - voltage code x 100 = v rrm - environmental digit: 7 pbf = lead (pb)-free and rohs compliant -m3 = halogen-free, rohs compliant and terminations lead (pb)-free device code 5 1 3 2 4 6 7 80 vs- a p f 12 pbf
outline dimensions www.vishay.com vishay semiconductors revision: 20-apr-17 1 document number: 95542 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 to-247ac - 50 mils l/f dimensions in millimeters and inches notes (1) dimensioning and tolerancing per asme y14.5m-1994 (2) contour of slot optional (3) dimension d and e do not include mold flas h. mold flash shall not exceed 0.127 mm (0 .005") per side. these dimensions are measu red at the outermost extremes of the plastic body (4) thermal pad contour optional with dimensions d1 and e1 (5) lead finish unc ontrolled in l1 (6) ? p to have a maximum draft an gle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154") (7) outline conforms to jedec ? outline to-247 with exception of dimension c and q symbol millimeters inches notes symbol millimeters inches notes min. max. min. max. min. max. min. max. a 4.65 5.31 0.183 0.209 d2 0.51 1.35 0.020 0.053 a1 2.21 2.59 0.087 0.102 e 15.29 15.87 0.602 0.625 3 a2 1.17 1.37 0.046 0.054 e1 13.46 - 0.53 - b 0.99 1.40 0.039 0.055 e 5.46 bsc 0.215 bsc b1 0.99 1.35 0.039 0.053 ? k 0.254 0.010 b2 1.65 2.39 0.065 0.094 l 14.20 16.10 0.559 0.634 b3 1.65 2.34 0.065 0.092 l1 3.71 4.29 0.146 0.169 b4 2.59 3.43 0.102 0.135 ? p 3.56 3.66 0.14 0.144 b5 2.59 3.38 0.102 0.133 ? p1 - 7.39 - 0.291 c 0.38 0.89 0.015 0.035 q 5.31 5.69 0.209 0.224 c1 0.38 0.84 0.015 0.033 r 4.52 5.49 0.178 0.216 d 19.71 20.70 0.776 0.815 3 s 5.51 bsc 0.217 bsc d1 13.08 - 0.515 - 4 0.10 a c m m e (2) (3) (4) (4) (2) r/2 b 2 x r s d see view b 2 x e b4 3 x b 2 x b2 l c (5) l1 1 2 3 q d a a2 a a a1 c ? k b d m m a (6) p (datum b) p1 d1 (4) 4 e1 0.01 b d m m view a - a thermal pad d2 dde e c c view b (b1, b3, b5) base metal c1 (b, b2, b4) section c - c, d - d, e - e (c) plating
legal disclaimer notice www.vishay.com vishay revision: 08-feb-17 1 document number: 91000 disclaimer ? all product, product specifications and data ar e subject to change with out notice to improve reliability, function or design or otherwise. vishay intertechnology, inc., its affiliates, agents, and employee s, and all persons acting on it s or their behalf (collectivel y, vishay), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained in any datasheet or in any o ther disclosure relating to any product. vishay makes no warranty, representation or guarantee regarding the suitability of th e products for any particular purpose or the continuing production of any product. to the maximum extent permitted by applicable law, vi shay disclaims (i) any and all liability arising out of the application or use of any product , (ii) any and all liability, including without limitation specia l, consequential or incidental damages, and (iii) any and all implied warranties, includ ing warranties of fitness for particular purpose, non-infringement and merchantability. statements regarding the suitability of products for certain types of applicatio ns are based on vishays knowledge of typical requirements that are often placed on vishay products in generic applications. such statements are not binding statements about the suitability of products for a particular applic ation. it is the customers responsibility to validate tha t a particular product with the prope rties described in the product sp ecification is suitable for use in a particular application. parameters provided in datasheets and / or specifications may vary in different ap plications and perfor mance may vary over time. all operating parameters, including ty pical parameters, must be va lidated for each customer application by the customer s technical experts. product specifications do not expand or otherwise modify vishays term s and conditions of purchase, including but not limited to the warranty expressed therein. except as expressly indicated in writing, vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the vishay product could result in personal injury or death. customers using or selling vishay product s not expressly indicated for use in such applications do so at their own risk. please contact authorized vishay personnel to obtain writ ten terms and conditions rega rding products designed for such applications. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is gran ted by this document or by any conduct of vishay. product names and markings noted herein may be trademarks of their respective owners. ? 2017 vishay intertechnology, inc. all rights reserved
|
